07.10.2011 RLT1300-BL 1 of 2 RLT1300-BL technical data infrared laser diode features applications ? lasing mode structure: single mode ? peak wavelength : typ. 1310 nm ? optical ouput power: 5 mw ? package: 5.6 mm, 4-pin, ball lens ? optical fiber communication ? free-space optical communication specifications (25c) characteristics symbol min. typ. max. unit optical specifications cw output power p o - 5 - mw center wavelength c 1290 1310 1330 nm spectral width ? - 3.0 - nm emitting area w x h - 4 x 1 - m wavelength temperature coefficient - 0.35 - nm/c beam divergence U - 40x20 - deg polarization te electrical specifications threshold current i th - 10 - ma operating current i op - 27 - ma operating voltage v op v monitor current i pd ma package style to18, 4-pin absolute maximum ratings reverse voltage u r v operating temperature t op +10 ? +30 c storage temperature t stg -40 ... +85 c
07.10.2011 RLT1300-BL 2 of 2 electrical connection to18 package ( buttom view ) pin 1: pd cathode pin 2: n.c. pin 3: ld cathode pin 4: ld anode, pd anode notes 1. high power laser diodes are high energy laser devices. it is harmful to human body and health. never look directly into the laser output port. 2. high power laser diodes could operate in forward voltage. the reverse current and voltage should not be higher than 25a and 3v, respectively. 3. heavy humidity can get dew on the ld then damage the ld. 4. the generated heat must be removed in time when the ld working. 5. the high temperature will effect the performance of the products. the lifetime can also be shortened by high temperature. 6. the operating current and optical power of laser must not be higher than the given rate current and power. the excessive current would accelerate aging and shorten lifetime, even damage the ld. 7. the semiconductor laser diode is a sensitive electronic device. please observe precaution for handling electrostatitic sensitive devices.
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